Educational guide School of Engineering |
english |
Engineering and Technology of Electronic Systems (2014) |
Subjects |
ADVANCED SEMICONDUCTOR DEVICES |
Contents |
IDENTIFYING DATA | 2014_15 |
Subject | ADVANCED SEMICONDUCTOR DEVICES | Code | 17675207 | |||||
Study programme |
|
Cycle | 2nd | |||||
Descriptors | Credits | Type | Year | Period | ||||
3 | Optional | 2Q |
Competences | Learning outcomes | Contents |
Planning | Methodologies | Personalized attention |
Assessment | Sources of information | Recommendations |
Topic | Sub-topic |
1. Introduction | 1.1 Electrostatics and charge transport in semiconductors 1.2 TCAD simulation. Introduction to Atlas 1.3 Electron Device Automation tools. Introduction to device model coding in Verilog-A |
2.Nanoscale MOSFET structures | 2.1. Short channel effects in MOSFETs 2.2. Nanoscale bulk MOSFETs MOSFETs 2.3 SOI MOSFETs 2.4 FinFETs and Multi-Gate MOSFETs |
3.Advanced power semiconductor devices | 3.1 Insulated Gate Bipolar Transistors (IGBT) 3.2. Power MOSFETs |
4. Compound semiconductor devices | 4.1. Heterojunction Bipolar Transistors (HBTs) 4.2. Advanced MESFET and HEMT structures. GaAs and GaN devices. |
5. Thin-Film Transistors (TFTs) | 5.1 Amorphous Silicon TFTs 5.2. Polycrystalline Silicon TFTs 5.3. Organic TFTs 5.4. Oxide TFTs |
6.Post-CMOS devices | 6.1. Tunnel FETs 6.2. Single- Electron Transistor 6.3. Carbon nanotubes and graphene transistors |