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Type A
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Code |
Competences Specific | | | A5 |
Conèixer les tecnologies pròpies de la fabricació de microsistemes.
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Type B
|
Code |
Competences Transversal | | | B2 |
Effective solutions to complex problems |
| | B4 |
Autonomy, responsibility and initiative |
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Type C
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Code |
Competences Nuclear | | | C1 |
Have an intermediate mastery of a foreign language, preferably English |
| | C2 |
Be advanced users of the information and communication technologies |
| | C4 |
Be able to express themselves correctly both orally and in writing in one of the two official languages of the URV |
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Type A
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Code |
Learning outcomes |
| | A5 |
Descriu el concepte de sistemes micro-electro-mecànics (MEMS).
Compara i valora els processos tecnològics utilitzats en la fabricació de circuits integrats i MEMS.
Descriu algunes implementacions físiques de dispositius bàsics (unió PN, BJT, MOS) i entén el seu funcionament.
Argumenta la influència de la implementació física en el comportament del dispositiu.
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Type B
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Code |
Learning outcomes |
| | B2 |
Find appropriate solutions.
Adopt realistic strategies for solving problems.
| | | B4 |
Decide how to manage and organize work and time.
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Type C
|
Code |
Learning outcomes |
| | C1 |
Understand the general meaning of texts that have non-routine information in a familiar subject area.
| | | C2 |
Use software for off-line communication: word processors, spreadsheets and digital presentations.
| | | C4 |
Produce oral texts that are appropriate to the communicative situation.
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| Topic |
Sub-topic |
Semiconductors fundamentals.
Microelectronic substrates
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Semiconductor Concept. Case of Silicon
Band diagrams and crystalline structure
Charge carriers (generation/recombination)
Intrinsic and extrinsic semiconductors
Corrientes en un semiconductor. Continuity Eq
Wafers
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| Basic technological Processes in Microelectronics |
Energetic processes (Oxidation and doping)
Deposition processes (PVD, CVD, Epitaxial growth)
Photolithography
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| PN junction |
Charge distribution, electric field and junction bias
Biasing
Diode Equation.
Schottcky diode
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| Bipolar Junction Transistor |
Working principles Ebers-Moll model
2nd order effects (Base induced field, Early Effect, Junction breakdown)
Topologies
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| MOSFET Transistor |
Working principles
Band diagram
Threshold Voltage
Working Equations
Topology
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| MEM's |
Concept
Examples
Associated Technologies
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| Methodologies :: Tests |
| |
Competences |
(*) Class hours
|
Hours outside the classroom
|
(**) Total hours |
| Introductory activities |
|
1 |
0 |
1 |
| Presentations / expositions |
|
2 |
0 |
2 |
| Lecture |
|
26 |
45 |
71 |
| Assignments |
|
8 |
15 |
23 |
| Personal tuition |
|
1 |
0 |
1 |
| |
| Objective short-answer tests |
|
2 |
0 |
2 |
| |
(*) On e-learning, hours of virtual attendance of the teacher.
(**) The information in the planning table is for guidance only and does not take into account the heterogeneity of the students. |
Methodologies
| |
Description |
| Introductory activities |
The methodologies to be used in the matter will be revised as well as the program, the learning objectives, the assessment procedure and reference books |
| Presentations / expositions |
Students would present individually the results of the works performed during the course to their collegues. |
| Lecture |
The topics of the matter will be exposed in class as well as representative examples. |
| Assignments |
Each student or group of 2 students will be asked to define and simulate the procedures to achieve a given electronic device. Then, the behavior of this device will be simulated also. |
| Personal tuition |
Students will be able to solve any doubt about concepts reviewed in class or solving problems or in any other activity, attending to the office of any lecturer related to the matter, according to the timetable reserved for this purpose. |
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Description |
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Students will be able to solve any doubt about concepts reviewed in class or solving problems or in any other activity, attending to the office of any lecturer related to the matter, according to the timetable reserved for this purpose. |
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Methodologies |
Competences
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Description |
Weight |
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|
|
|
| Presentations / expositions |
|
The students will have to perform an oral presentation in front of their classmates of the works completed during the course. The order, the clarity, the correctness and the abilities to communicate the obtained results will be evaluated. |
20 % |
| Assignments |
|
The students will have to produce written reports about the works they will carry out during the course. The reports will need to contain a description of the work objectives, a summary of the obtained results and conclusions. The order, the clarity, the correctness and the abilities to produce a written text adequate to the communicative needs will be evaluated. |
35 % |
| Objective short-answer tests |
|
An exam consisting of the resolution of short questions implying the demonstration of the acquired competencies by the student and related with the course will be conducted |
45 % |
| Others |
|
|
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| |
|
Other comments and second exam session |
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COMMENTS: For multiple choice tests, students may not have or use any communication device or data transmission capacity. Students who fail to pass the continuous assessment will have a second round consisting in an objective short-answer tests. |
| Basic |
Stephen A. Campbell, Fabrication Engineering at the Micro and Nanoscale, 3a Edició, Oxford University Press, 2008
K.F. Brennan, Introduction to semiconductor devices. For computing and telecommunications applications, , Cambridge University Press, 2005
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| Complementary |
|
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| Subjects that continue the syllabus |
| ADVANCED SEMICONDUCTOR DEVICES/17675207 | | RADIOFREQUENCY AND OPTICAL ELECTRONIC TECHNOLOGY/17675209 |
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| Subjects that are recommended to be taken simultaneously |
| MICRO AND NANO SENSOR SYSTEMS/17675210 |
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(*)The teaching guide is the document in which the URV publishes the information about all its courses. It is a public document and cannot be modified. Only in exceptional cases can it be revised by the competent agent or duly revised so that it is in line with current legislation. |
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