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Type A
|
Code |
Competences Specific | | | A10 |
Integrar nous nanomaterials i tecnologies en dispositius electrònics i optoelectrònics (competència de l'especialitat Microsistemes Electrònics).
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Type B
|
Code |
Competences Transversal | | | B1 |
Learning to learn |
| | B2 |
Effective solutions to complex problems |
| | B3 |
Critical, logical and creative thinking, and an ability to innovate |
| | B4 |
Autonomy, responsibility and initiative |
| | B6 |
Clear and effective communication of information, ideas, problems and solutions in public or a specific technical field |
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Type C
|
Code |
Competences Nuclear | | | C1 |
Have an intermediate mastery of a foreign language, preferably English |
| | C2 |
Be advanced users of the information and communication technologies |
| | C3 |
Be able to manage information and knowledge |
| | C6 |
Be able to define and develop their academic and professional project |
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Type A
|
Code |
Learning outcomes |
| | A10 |
Descriu els diferents tipus de dispositius semiconductors avançats.
Descriu el funcionament, característiques i aplicacions actuals dels dispositius semiconductors avançats.
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Type B
|
Code |
Learning outcomes |
| | B1 |
Have an overview of the various theories and methodologies of a subject.
Autonomously adopt learning strategies in each situation.
| | | B2 |
Find appropriate solutions.
Adopt realistic strategies for solving problems.
| | | B3 |
Identify the results of innovation.
Be aware of who is affected by innovation and how.
Analyze the risks and benefits of innovation.
| | | B4 |
Present results in the appropriate way in accordance with the bibliography provided and before the deadline.
Decide how to manage and organize work and time.
| | | B6 |
Draft documents with the appropriate format, content, structure, language accuracy and register, and illustrate concepts using the appropriate conventions: formats, titles, footnotes, captions, etc.
Prepare their presentations and use a variety of presentation strategies (audiovisual support, eye contact, voice, gesture, time, etc.).
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Type C
|
Code |
Learning outcomes |
| | C1 |
Explain and justify briefly their opinions and projects.
Understand the general meaning of texts that have non-routine information in a familiar subject area.
| | | C2 |
Use software for off-line communication: word processors, spreadsheets and digital presentations.
| | | C3 |
Locate and access information effectively and efficiently.
Have a full understanding of the economic, legal, social and ethical implications of accessing and using information.
| | | C6 |
Identify their own academic and professional interests and motivations.
Develop resources and strategies that will ease their transition into working life.
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| Topic |
Sub-topic |
| 1. Introduction |
1.1 Electrostatics and charge transport in semiconductors
1.2 TCAD simulation. Introduction to Atlas
1.3 Electron Device Automation tools. Introduction to device model coding in Verilog-A |
| 2.Nanoscale MOSFET structures |
2.1. Short channel effects in MOSFETs
2.2. Nanoscale bulk MOSFETs MOSFETs
2.3 SOI MOSFETs
2.4 FinFETs and Multi-Gate MOSFETs
|
| 3.Advanced power semiconductor devices |
3.1 Insulated Gate Bipolar Transistors (IGBT)
3.2. Power MOSFETs
|
| 4. Compound semiconductor devices |
4.1. Heterojunction Bipolar Transistors (HBTs)
4.2. Advanced MESFET and HEMT structures. GaAs and GaN devices.
|
| 5. Thin-Film Transistors (TFTs) |
5.1 Amorphous Silicon TFTs
5.2. Polycrystalline Silicon TFTs
5.3. Organic TFTs
5.4. Oxide TFTs
|
| 6.Post-CMOS devices |
6.1. Tunnel FETs
6.2. Single- Electron Transistor
6.3. Carbon nanotubes and graphene transistors
|
| Methodologies :: Tests |
| |
Competences |
(*) Class hours
|
Hours outside the classroom
|
(**) Total hours |
| Introductory activities |
|
0 |
0 |
0 |
| Lecture |
|
15 |
22.5 |
37.5 |
| Seminars |
|
15 |
22.5 |
37.5 |
| Personal tuition |
|
0 |
0 |
0 |
| |
| |
(*) On e-learning, hours of virtual attendance of the teacher.
(**) The information in the planning table is for guidance only and does not take into account the heterogeneity of the students. |
Methodologies
| |
Description |
| Introductory activities |
|
| Lecture |
Detailed oral explanation of the course topics |
| Seminars |
Seminars about demonstration of the use of TCAD device simulation tools, device coding in Verilog-A, and mathematical solving of problems about advanced semiconductor devices. |
| Personal tuition |
|
|
Description |
|
A short course Project will be proposed to each student. During the realization of their project, they can regularly meet the professor to discuss about doubts and results obtained. |
|
Methodologies |
Competences
|
Description |
Weight |
|
|
|
|
| Lecture |
|
Written exam consisting on one 10 question test and two problems to mathematically solve |
30% (test: 15%; problems: 15%) |
| Seminars |
|
Course project: Individual short project. The student most present a written report and make a 10 minutes oral presentation |
70% (report: 45%; oral presentation: 25%) |
| Others |
|
|
|
| |
|
Other comments and second exam session |
|
To pass the subject, the minimum scores are 40% for the written exam, 50% for the course project, and 50% as total score |
| Basic |
|
S. M. Sze, K. K. Ng, (2007) Physics of semiconductor devices, 3rd edition, John Wiley & Sons, New
York |
| Complementary |
|
T. A. Fjeldly T., Ytterdal T., and M. Shur
(1998) Introduction to Device
Modeling and Circuit Simulation, John Wiley & Sons, New York J. P. Colinge (2004).. Silicon-On-Insulator
Technology Materials
to VLSI, Springer S. D. Brotherton. (2013). Introduction to Thin Film Transistors.
Springer |
| |
| Other comments |
|
A basic knowledge of the behaviour of MOSFETs and BJTs, as well as of the SPICE circuit simulator, is recommended |
(*)The teaching guide is the document in which the URV publishes the information about all its courses. It is a public document and cannot be modified. Only in exceptional cases can it be revised by the competent agent or duly revised so that it is in line with current legislation. |
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