Type A
|
Code |
Competences Specific | | A1.1 |
A1.1. Successfully studying and learning about the chosen research ambit: evaluating the technical and scientific importance, the technological potential and the viability of the nanoscience, design, preparation, properties, processes, developments, techniques and applications of materials. |
Type B
|
Code |
Competences Transversal | | B1.1 |
B1.1. Communicating and discussing proposals and conclusions in specialized and non-specialized multilingual forums in a clear and unambiguous manner. |
| B3.1 |
B3.1. Collaborative teamwork, with responsibility shared among multidisciplinary, multilingual and multicultural teams. |
| B4.2 |
B4.2 Learning autonomously and by using initiative. |
Type C
|
Code |
Competences Nuclear | | C1.1 |
Have an intermediate mastery of a foreign language, preferably English |
| C1.2 |
Be advanced users of the information and communication technologies |
| C1.3 |
Be able to manage information and knowledge |
Type A
|
Code |
Learning outcomes |
| A1.1 |
A1.1 Can formulate knowledge about the basic principles used in the field of nanofabrication and nanoprocessing, materials and the main techniques used in this area.
A1.1 Select the most appropriate nanofabrication methods to solve specific problems of nanotechnology.
|
Type B
|
Code |
Learning outcomes |
| B1.1 |
B1.1 Can intervene effectively and transmit relevant information.
B1.1 Plan their communication: generate ideas, seek information, select and order information, make schemes, decide on the audience and the aims of the communication, etc.
B1.1 Prepare and deliver structured presentations, complying with the requirements.
B1.1 Draft documents with the appropriate format, content, structure, language accuracy, and register, and can illustrate concepts using the correct conventions: format, headings, footnotes, captions, etc.
B1.1 Use language that is appropriate to the situation.
B1.1 Are aware of the strategies that can be used in oral presentations (audiovisual support, eye contact, voice, gesture, timing, etc.).
| | B3.1 |
B3.1 Accept and comply with the rules of the group.
B3.1 Take active part in planning the team’s work, distributing tasks and respecting deadlines.
B3.1 Contribute to the positive management of any differences, disagreements and conflicts that arise in the team.
B3.1 Make their personal contribution in the time expected and with the resources available.
B3.1 Take active part and share information, knowledge and experiences.
B3.1 Take into account the points of view of others and give constructive feedback.
| | B4.2 |
B4.2 Ask the appropriate questions for solving doubts or open questions, and search for information with criteria.
B4.2 Select a procedure from among the possibilities suggested by the lecturer.
|
Type C
|
Code |
Learning outcomes |
| C1.1 |
Express opinions on abstract or cultural topics in a limited fashion.
Explain and justify briefly their opinions and projects.
Understand instructions about classes or tasks assigned by the teaching staff.
Understand routine information and articles.
Understand the general meaning of texts that have non-routine information in a familiar subject area.
Write letters or take notes about foreseeable, familiar matters.
| | C1.2 |
Understand basic computer hardware.
Understand the operating system as a hardware manager and the software as a working tool.
Use software for off-line communication: word processors, spreadsheets and digital presentations.
Use software for on-line communication: interactive tools (web, moodle, blogs, etc.), e-mail, forums, chat rooms, video conferences, collaborative work tools, etc.
| | C1.3 |
Locate and access information effectively and efficiently.
Critically evaluate information and its sources, and add it to their own knowledge base and system of values.
Have a full understanding of the economic, legal, social and ethical implications of accessing and using information.
Reflect on, review and evaluate the information management process.
|
Topic |
Sub-topic |
Introduction |
Introduction and preliminary concepts. |
Chapter 1. Thin film deposition and growth.
|
Introduction. Thin film growth. Surface structure. Stages and processes. Epitaxy.
Deposition techniques. Physical techniques (PVD). Chemical techniques (CVD). PCVD techniques. Thin film characterization. In situ techniques. Ex situ techniques. Growth and Deposition Techniques.
|
Chapter 2. Optical lithography |
Concept of optical lithography. Conventional optical lithography. Resist. Instrumentation. Microelectronics as the driving force for miniaturization. Limits of optical lithography. Advanced optical lithography.
|
Chapter 3. Electron beam lithography. |
Introduction to electron beam lithography. Optical electron systems: electron-beam lithography (EBL). Solids-electron interactions. Beam exposition: Resists. Proximity effects. Process technology. Applications. |
Chapter 4. Focussed ion beam technology. |
Basics of ion-beam-solid interactions:Interactions of the ions with a target:
-Implantation of the primary ions
-Damage of the structure
-Emission of secondary atoms or ions (sputtering)
-Emission of secondary electrons
-Emission of secondary electrons
-Backscattering
-Deposition of molecules
-Ion channelling
FIB apparatus and Dual-Beam
Examples of FIB in the field of analysis
Examples of applications
Summary |
Chapter 5. Non-conventional lithographyc techniques I: Atomic Force Microscopies. |
Lithographs based on near field microscopy: Introduction to scanning probe microscopy (SPM). Summary of scanning probe lithographic methods. Atomic manipulation (STM). Manipulation of objects and molecules. Indentation / local repository. Local oxidation nanolithography. Local dispensing of liquids and molecules (including Dip pen nanolithography). Nanofabrication in parallel.
|
Chapter 6. Non-conventional lithographyc techniques II: Embossing, imprinting and soft lithographies. |
Imprinting and embossing techniques. Thermoplastics: vitrious transition temperature. Hot embossing and NanoImprint Lithography (NIL). Curing of resists using UV light. Replica molding. Soft lithographies. |
Chapter 7. Thin film processing. |
Wet etching. Lift-off process. Plasma assisted etching. Reactive ion etching
Etching techniques. Dry etching. Vapour phase etching. Sputtering ion etching |
Chapter 8. Global fabrication processes. |
Fabrication of complex structures using the techniques described in the previous topics. Proposed alternative and complementary techniques. |
Methodologies :: Tests |
|
Competences |
(*) Class hours
|
Hours outside the classroom
|
(**) Total hours |
Introductory activities |
|
1 |
0 |
1 |
Lecture |
|
25 |
50 |
75 |
Presentations / expositions |
|
4 |
4 |
8 |
Personal tuition |
|
3 |
4.5 |
7.5 |
|
Extended-answer tests |
|
6 |
12 |
18 |
Practical tests |
|
1 |
2 |
3 |
|
(*) On e-learning, hours of virtual attendance of the teacher. (**) The information in the planning table is for guidance only and does not take into account the heterogeneity of the students. |
Methodologies
|
Description |
Introductory activities |
Activities to make contact and collect student information. Presentation of the subject.
|
Lecture |
Delivery and explanation of the contents of the course.
|
Presentations / expositions |
Oral presentation by students of a particular subject or a (previously written presentation).
|
Personal tuition |
Time that each lecturer has booked to attend and answer questions to students. |
Description |
The professors will be available to clarify doubts. It is recommended to contact by email in advance.
Dr. Alex Fragoso (coordinator of the course). Dept. Chemical Engineering, office 318 (edificio ETSEQ), e-mail: alex.fragoso@urv.cat.
Dr. Rosa Maria Solé, Dept. Physical and Inorganic Chem., office 216 (Facultat de Química), e-mail: rosam.sole@urv.cat.
Dr. Jaume Massons, Dept. Physical and Inorganic Chem., office 225 (Facultat de Química), e-mail jaume.massons@urv.cat.
Dr. Maria Cinta Pujol, Dept. Physical and Inorganic Chem., Lab. 213 (Facultat de Química), e-mail mariacinta.pujol@urv.cat
Dr. Francisco Javier Andrade, Dept. Analitical and Organic Chem., office 312 (Facultat de Química), e-mail: franciscojavier.andrade@urv.cat.
|
Methodologies |
Competences
|
Description |
Weight |
|
|
|
|
Presentations / expositions |
|
Students will be divided into groups and each group will conduct an oral exposition on the work they have developed during the course. |
20% |
Practical tests |
|
Test about global fabrication from a practical point of view. |
20% |
Extended-answer tests |
|
Three partial tests will be made during the course on chapters 1-3, 4/5 and 6/7. Each one will have a weight of 20% of the final grade. |
60% |
Others |
|
|
|
|
Other comments and second exam session |
During testing assessment, mobile phones, tablets and other devices that are not expressly authorized alectrònics for the test must be switched off and out of sight. In the second call, the mark of presentations and practical test (40%) will be maintained and a written exam of the contents of the subject (60%) will be taken. |
Basic |
M.J. Madou , Fundamentals of microfabrication: the science of miniaturization. , CRC Press , 2002
B. Bushan et al. , Springer Handbook of Nanotechnology , Springer, 2006
J.N. Helbert, Handbook of VLSI Microlithography - Principles, Tools, Technology and Applications. , William Andrew Publishing/Noyes , 2001
H.S. Nalwa (editor) , Encyclopedia of nanoscience and nanotechnology , American Scientific Publishers , 2004
Z. Cui , Micro-Nanofabrication: Technology and Applications , Springer Verlag , 2006
M. Ohring , Materials Science of Thin Films , Academic Press , 2002
J.A. Venables , Introduction to Surface and Thin Film Processes , Cambridge University Press , 2001
|
|
Complementary |
|
Journals in the field of Nanotechnology Applied Physics and Chemical Synthesis Proceedings of conferences in the field of the
subject |
Subjects that are recommended to be taken simultaneously |
CLEAN ROOM TRAINING/20705207 |
|
(*)The teaching guide is the document in which the URV publishes the information about all its courses. It is a public document and cannot be modified. Only in exceptional cases can it be revised by the competent agent or duly revised so that it is in line with current legislation. |
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